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Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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    Buy cheap Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices from wholesalers
     
    Buy cheap Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices from wholesalers
    • Buy cheap Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices from wholesalers
    • Buy cheap Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices from wholesalers

    Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

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    Brand Name : Crystro
    Model Number : CR210816-01
    Certification : SGS/COC
    Price : USD 20-200/pc
    Payment Terms : T/T, Western Union, MoneyGram, Paypal
    Supply Ability : 2000pcs per month
    Delivery Time : 3-5 weeks
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    Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices

    Fe doped LiTaO3 Crystals Lithium Tantanlate Wafer Used For E-O devices


    LiTaO3 is an E-O crystal widesly used for E-O devices, due to its good optical NLO and E-O properties, as well as high damage threshold. Crystro supplies hign quality LiTaO3 boules and wafers with the following specifications for standard applications. We can also offer other specification upon request:


    Crystro's Fe:LiTaO3 is grown by Czochralski method.Max diameter reach 6inch,Crystro can offer kinds of size per required.

    Anhui Crystro participate in the kinds exhibitions every year: Laser World of Photonics Munich, Shanghai, Photonics West in San Francisco, CIOE in Shenzhen, etc.We looking forward to meet you.


    Typical Specifications:


    MaterialLiTaO3 wafers(White or Black &Fe doped)
    Curie Temp603±2℃
    Cutting AngleX/Y/Z/X112Y/Y36/Y42/Y48/etc
    Diameter/size2”/3”/4" LT wafer or other size
    Tol(±)<0.20 mm
    Thickness0.18 ~ 0.5mm or more
    Primary Flat22mm /32mm /42.5mm /57.5mm
    LTV (5mmx5mm)<1µm
    TTV<3µm
    Bow-30<bow<30
    Warp<40µm
    PLTV(<0.5um)≥95%(5mm*5mm)
    Orientation FlatAll available
    Surface TypeSingle Side Polished /Double Sides Polished
    Polished side Ra<0.5nm
    Back Side CriteriaGeneral is 0.2-0.5µm or as customized
    Edge CriteriaR=0.2mm or Bullnose
    Fe dopedFe doped for saw grade LN< wafers
    Wafer Surface CriteriaTransmissivitygeneral:5.9x10-11<s<2.0*10-10 at 25℃
    Contamination,None
    Particles ¢>0.3 µ m<= 30
    Scratch , ChippingNone
    DefectNo edge cracks, scratches, saw marks, stains

    Quality Fe Doped LiTaO3 Crystals Lithium Tantanlate Wafer For E-O Devices for sale
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