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Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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    Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers
     
    Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers
    • Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers
    • Buy cheap Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized from wholesalers

    Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

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    Brand Name : Crystro
    Model Number : CR2202241-04
    Certification : ISO:9001, ISO:14001
    Price : USD 20~200/pc
    Payment Terms : T/T, Western Union, MoneyGram, Paypal
    Supply Ability : 20000pcs per month
    Delivery Time : 1-4weeks
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    Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized

    Customized Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS

    Crystro can customize Surface Acoustic Piezoelectric Wafers including :

    Lithium Niobate,Lithium Tantalate,Quartz Crystal as reuqired cutting orientation and size,our Piezoelectric Effect crystals are grown by Czochralski method. Max diameter reach 6inch,we can custom size and specs ,rougness<0.5nm.
    Dia 3" 4" 6" wafers are all available as per requirement.


    Crystro possess Corning Flatmaster 200 Profiler, Laser marking equipment, AOI and 6-step cleaning line.


    Crystro provides:


    Excellent photoelectric property
    High Damage Threshold
    High Curie Temperature



    Basic Properties of LiTaO3:

    MaterialLithium NiobateLithium TantalateQuartz Crystal
    Diameter / Size3’’, 4’’, 6’’, 8’’3’’, 4’’, 6’’3’’, 4’’, 5’’, 6’’, 8’’
    Cut TypeX / Y / ZX / Y-Z / X-112YX / Y / Z
    36Y / 64Y/128Y28Y / 36Y / 42YAT / ST / DT
    Surface FinishDouble side polish / Single side polish
    Thickness0.25mm / 0.35mm / 0.50mm / 1.00mm / 2.00mm
    TTV< 5um
    PLTV>98% (5mm*5mm)
    LTV< 1.5um
    Bow-25um < Bow < +25um
    Warp< 30um
    RoughnessRa<0.5nm, Ra<1nm
    Curie Temp.1142℃ ± 2℃605℃ ± 2℃573℃
    Edge ProfileRound Ground, "C" Shape
    Flats22±2mm, 32.5±2mm, 47.5±2mm, 57.5±2mm, Notch
    As per request
    Dope withEr, MgOFewith or without seed
    Front SideRoughness Ra<= 10A
    Back SideRoughness Ra: 0.2--0.7um GC#1000, GC#2000
    AppearanceNo Cracks, saw marks, stains
    Single DomianCompleted Polarization / ReducedNo Stress


    Quality Piezo LiNbO3 LiTaO3 Wafer For Semiconductor POI And MEMS Customized for sale
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