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Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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    Buy cheap Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished from wholesalers
     
    Buy cheap Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished from wholesalers
    • Buy cheap Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished from wholesalers
    • Buy cheap Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished from wholesalers

    Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

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    Brand Name : Crystro
    Model Number : CR20200108-8
    Certification : SGS
    Price : Negotiable
    Payment Terms : T/T, Western Union, MoneyGram, Paypal
    Supply Ability : 1000pcs/month
    Delivery Time : 3-4 weeks
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    Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished

    Round <100> LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase


    LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

    LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.


    Applications:


    Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials


    Main Advantages:


    Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability


    Main Properties:


    Typical Physical Properties
    Crystal StructureCubic a=3.79 Angstroms
    Growth MethodCzochralski
    Density6.52 g/cm3
    Melt Point2080 oC
    Thermal expansion10 (x10-6/ oC)
    Dielectric Constant~ 25
    Loss Tangent at 10 GHz~3x10-4 @ 300K , ~0.6 x10-4 @77K
    Color and AppearanceTransparent to Brown based on annealing condition. Visible twins on polished substrate
    Chemical StabilityInsoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC
    Quality Round LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase Double Side Polished for sale
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