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Electro Optic 32um Langasite Pockel Cell Q Switch

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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    Buy cheap Electro Optic 32um Langasite Pockel Cell Q Switch from wholesalers
     
    Buy cheap Electro Optic 32um Langasite Pockel Cell Q Switch from wholesalers
    • Buy cheap Electro Optic 32um Langasite Pockel Cell Q Switch from wholesalers
    • Buy cheap Electro Optic 32um Langasite Pockel Cell Q Switch from wholesalers
    • Buy cheap Electro Optic 32um Langasite Pockel Cell Q Switch from wholesalers

    Electro Optic 32um Langasite Pockel Cell Q Switch

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    Brand Name : CRYSTRO
    Model Number : CR200820-04
    Certification : SGS/ROHS
    Price :
    Payment Terms : T/T, Western Union, MoneyGram, Paypal
    Delivery Time : 4-5 weeks
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    Electro Optic 32um Langasite Pockel Cell Q Switch

    LGS Series Electro-optic (EO) Q-switch Pockels Cell


    A new kind of EO Q-switch is designed by use of a La3Ga5SiQ14 (LGS) crystal. LGS crystal is one kind of optically active NLO material with very high damage threshold (about 9 times as that of LN), excellent E-O coefficient, high temperature stability (better than quartz), the Q-switch is based on the consideration that the total rotation angle of the polarization plane is zero, whereas the polarized wave propagates through the Pockels cell back and forth, with the polarization plane gyration and electro-optic effect existing simultaneously, therefore it is widely used in E-O components such as E-O modulator, Q-switch, etc.


    The LGS electro-optic Q switch passes light along the Z direction of the crystal and applies an electric field along the X direction, which can make full use of the lateral electro-optic effect of the crystal to realize the Q-switch function of the LGS crystal. The electro-optic Q-switch made by LGS is actually a new kind of rotation-electro-optical Q-switch.


    Basic Properties:

    Chemical FormulaLa3Ga5SiQ14
    Crystal StructureTrigonal; a=b=7.453Å,c=6.293Å
    Density5.75 g/cm3
    Melting Point1470 °C
    Transparency Range242 - 3200 nm
    Refractive Index1.89
    Electro-Optic Coefficientsγ41=1.8 pm/V, γ11=2.3 pm/V
    Resistivity1.7×1010 Ω·cm
    DeliquescenceNo
    Thermal Expansion Coefficientsα11=5.15×10-6 /K (⊥Z-axis) ; α33=3.65×10-6 /K (∥Z-axis)

    Features:

    • LGS -based Q-switch (Pockels cell);
    • For wavelengths up to 3.2μm;
    • Transmitted Wave Front Distortion: < l/4;
    • Damage threshold: >900MW/cm2 (@1064nm, 10ns, typical, not guaranteed);
    • LGS available for medium power systems, partially take place of DKDP and LiNbO3 series Q-switches.
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